hv single discrete igbt 60 amperes/4500 volts QIS4506002 preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 01/10 rev. 3 outline drawing and circuit diagram dimensions inches millimeters a 2.35 59.7 b 0.98 25.0 c 1.98 50.3 d 0.197 5.0 e 0.22 5.5 f 0.22 5.6 g 0.465 11.8 h 0.27 6.9 description: powerex single non-isolated discrete is designed specially for customer high voltage switching and pulse power applications. features: ? low drive requirement ? low v ce(sat) ? molybdenum mounting plate dimensions inches millimeters j 0.93 23.6 k 0.14 3.6 l 0.20 5.2 m 0.40 1.0 n 0.43 11.0 p 0.20 0.5 q 0.12 3.0 r 0.208 dia. 5.3 dia. c (base) g (2) e (3) e (1) e (3) g (2) e (1) c (base) a f h k q p e l j b g m r c n d
2 preliminary QIS4506002 hv single discrete igbt 60 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/10 rev. 3 maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QIS4506002 units collector emitter voltage v ces 4500 volts gate emitter voltage v ges 20 volts collector current (dc, t c = 127c) i c 60 amperes peak collector current (pulsed) i cm 120* amperes junction temperature t j -55 to 150 c storage temperature t stg -55 to 125 c mounting torque, m5 mounting screws 30 in-lb weight (typical) 20 grams static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 7ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 60a, v ge = 15v, t j = 25c 3.0 3.9** volts i c = 60a, v ge = 15v, t j = 125c 3.6 volts total gate charge q g v cc = 2250v, i c = 60a, v ge = 15v 450 nc dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 9.0 nf output capacitance c oes v ge = 0v, v ce = 10v 0.65 nf reverse transfer capacitance c res 0.2 nf resistive turn-on delay time t d(on) v cc = 2250v, 2.4 s load rise time t r i c = 60a, 2.4 s switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, 6.0 s times fall time t f r g = 120? 1.2 s turn-on switching energy e on t j = 125c, i c = 60a, v cc = 2250v, 250 mj/p turn-off switching energy e off v ge = 15v, r g = 120?, l s = 180nh 170 mj/p thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) igbt 0.10 tbd c/w thermal resistance, case to sink r th(c-s) grease = 1w/mk 0.10 c/w thermal grease applied * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed device rating. **pulse width and repetition rate should be such that device junction temperature rise is negligible.
3 preliminary QIS4506002 hv single discrete igbt 60 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/10 rev. 3 0 100 200 300 400 500 collector current, i c , (amperes) turn-on switching energy, e on , (mj/p) turn-on switching energy characteristics (typical) 0 25 50 75 100 10 2 10 1 10 0 10 -1 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance characteristics (typical) 10 -1 10 0 10 1 10 2 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 6 5 0 25 50 100 4 3 2 1 0 v ge = 15v t j = 25c t j = 125c 125 collector-emitter voltage, v ce , (volts) collector current, i c , (volts) turn-on switching safe operating area (rbsoa) (typical) 125 0 1000 2000 3000 4000 5000 100 75 50 25 0 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge characteristics (typical) 20 0 250 500 750 1000 16 12 8 4 0 v cc = 2250v v ge = 15v r g = 120? l s = 180nh t j = 125c inductive load integrated over range of 10% v cc = 3000v v ge = 15v r g = 120? l s = 100nh t j = 125c v ge = 15v t j = 25c c ies , c oes : f = 100khz c res : f = 1mhz v cc = 2250v i c = 60a gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25c t j = 25c 0 60 180 300 360 collector current, i c , (amperes) turn-off switching energy, e off , (mj/p) turn-off switching energy characteristics (typical) 0 25 50 75 100 120 240 v cc = 2250v v ge = 15v r g = 120? l s = 180nh t j = 125c inductive load integrated over range of 10% 75 collector-emitter voltage, v ce , (voltage) collector current, i c , (amperes) output characteristics (typical) 100 75 0 2 4 8 50 25 0 10 6 gate-emitter voltage, v ge , (volts) collectorcurrent, i c , (amperes) transfer characteristics (typical) 875 625 750 0 4 8 16 500 375 250 125 0 v ce = 10v t j = 25c t j = 125c 20 12 c ies i c = 100a v ge = 20v 15v 14v 12v 10v 8v i c = 50a i c = 25a c oes c res
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